FGA25N120ANTD FGA25N120 Transistor 25N120 Original New IGBT Mosfet NPT and Trench 1200V 50A TO-3P China Made Bulk New In Stock

Product Categories

FFP2 Dust Mask [9]
KN95 Dust Mask [10]
N95 Dust Mask [3]
Semiconductor Integrated Circuit [237]
N Mosfet Transistor [223]
IGBT Power Modules [29]
Body Infrared Thermometer [7]
Protective Face Shield [7]
Disposable Medical Gowns [6]
Disposable Protective Suit [4]
Instant Hand Sanitizer [6]
Disposable Protective Gloves [6]
Disposable Head Cover [8]
Disposable Shoe Cover [5]
Medical Safety Goggles [5]

Shenzhen Quanyuantong Electronics Co., Ltd.

Contact Now

FGA25N120ANTD FGA25N120 Transistor 25N120 Original New IGBT Mosfet NPT and Trench 1200V 50A TO-3P China Made Bulk New In Stock

Name: FGA25N120ANTD FGA25N120 Transistor 25N120 Original New IGBT Mosfet NPT and Trench 1200V 50A TO3P China Made Bulk New In Stock
Brand: Original
Price: 0.35 USD

Buy cheap FGA25N120ANTD FGA25N120 Transistor 25N120 Original New IGBT Mosfet NPT and Trench 1200V 50A TO-3P China Made Bulk New In Stock product

Application : Amplifier

Supplier Type : Original manufacturer, Agency, Retailer

Cross Reference : China Made, Bulk New

Media Available : Photo

Place of Origin : US

Brand Name : Original

Model Number : FGA25N120ANTD

Package Type : Throught Hole

Type : Triode Transistor

Package / Case : TO-3P

Packaging : Tube

Lead Free Status / RoHS Status : Lead free / RoHS Compliant

Shipment method : DHL/UPS/Fedex/etc

BEST Price : Contact us!

Supply Ability : 859000PCS/Day

Packaging Details : Box/Reel/Tube

Port : Shenzhen/Hongkong/Guangzhou

MOQ : 10

Price : $0.35 - $2.00 / Piece

Delivery Time : 1-7 days

Payment Terms : T/T, Western Union, Paypal,Alibaba trade order

Contact Now

Product Detail

Packaging	Tube
Part Status	Active
IGBT Type	NPT and Trench
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	50A
Current - Collector Pulsed (Icm)	90A
Vce(on) (Max) @ Vge, Ic	2.65V @ 15V, 50A
Power - Max	312W
Switching Energy	4.1mJ (on), 960µJ (off)
Input Type	Standard
Gate Charge	200nC
Td (on/off) @ 25°C	50ns/190ns
Test Condition	600V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr)	350ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P
Base Part Number	FGA25N120A

Product Tags:

Sensitive Gate Through Hole Transistor

PNP Power Bipolar Transistor

FGA25N120ANTD FGA25N120 Transistor 25N120 Original New IGBT Mosfet NPT and Trench 1200V 50A TO-3P China Made Bulk New In Stock Images

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Shenzhen Quanyuantong Electronics Co., Ltd.
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!